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 HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2002.02.22 Page No. : 1/3
HSD965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD965 is suited for use as AF output amplifier and flash unit.
Absolute Maximum Ratings
TO-92
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 750 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ......................................................................................... 40 V VCEO Collector to Emitter Voltage ...................................................................................... 20 V VEBO Emitter to Base Voltage .............................................................................................. 7 V IC Collector Current (Continuous) ......................................................................................... 5 A IC Collector Current (Peak PT=10mS) .................................................................................. 8 A
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 20 7 230 150 Typ. 0.35 150 Max. 0.1 0.1 1 800 50 Unit V V V uA uA V Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 IC=3A, IB=100mA VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz pF
Classification Of hFE
Rank Range Q 230-380 R 340-600 S 560-800
HSD965
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000 1000
Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2002.02.22 Page No. : 2/3
Saturation Voltage & Collector Current
VCE(sat) @ IC=30IB 125 C
o
1000
25 C 75 C 100
o
o
Saturation Voltage (mV)
HFE
100 75 C 125 C
o o
25 C
o
hFE @ VCE=2V
10 10 100 1000 10000
10 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
100 1000
Cutoff Frequency & Collector Current
Cutoff Frequency (MHz).. .
Cob
Capacitance (pF)
100
VCE=6V
10
10
1 0.1 1 10 100
1 1 10 100 1000
Reverse-Biased Voltage (V)
Collector Current-IC (mA)
Safe Operating Area
10000
Power Derating
800 700
Power Dissipation-PD (mW)
Collector Current-IC (mA)
1000 PT=1ms PT=100ms 100 PT=1s
600 500 400 300 200 100
10
1 1 10 100
0 0 50 100
o
150
200
Forward Biased Voltage-VCE (V)
Ambient Temperature-Ta ( C)
HSD965
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
1 2 3
Date Code
Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2002.02.22 Page No. : 3/3
2
Marking:
H SD 965 Rank Control Code
3
C
Style: Pin 1.Emitter 2.Collector 3.Base
D
H I E F
G
1
3-Lead TO-92 Plastic Package HSMC Package Code: A
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD965
HSMC Product Specification


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